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DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D102
BC856W; BC857W; BC858W PNP general purpose transistors
Product data sheet Supersedes data of 1999 Apr 12 2002 Feb 04
NXP Semiconductors
Product data sheet
PNP general purpose transistors
FEATURES * Low current (max. 100 mA) * Low voltage (max. 65 V). APPLICATIONS * General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT323 plastic package. NPN complements: BC846W, BC847W and BC848W. MARKING TYPE NUMBER BC856W BC856AW BC856BW BC857W BC857AW BC857BW BC857CW BC858W Note 1. * = -: made in Hong Kong. * = t: made in Malaysia. MARKING CODE(1)
handbook, halfpage
BC856W; BC857W; BC858W
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
3
3 1 2
1 Top view 2
MAM048
3D* 3A* 3B* 3H* 3E* 3F* 3G* 3M* Fig.1
Simplified outline (SOT323; SC70) and symbol.
2002 Feb 04
2
NXP Semiconductors
Product data sheet
PNP general purpose transistors
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VCBO BC856W BC857W BC858W VCEO collector-emitter voltage BC856W BC857W BC858W VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Refer to SOT323 standard mounting conditions. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOT323 standard mounting conditions. PARAMETER thermal resistance from junction to ambient emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature open collector open base PARAMETER collector-base voltage
BC856W; BC857W; BC858W
CONDITIONS open emitter - - - - - - - - - - Tamb 25 C; note 1 -
MIN.
MAX. -80 -50 -30 -65 -45 -30 -5 -100 -200 -200 200 +150 150 +150 V V V V V V V
UNIT
mA mA mA mW C C C
-65 - -65
CONDITIONS in free air; note 1
VALUE 625
UNIT K/W
2002 Feb 04
3
NXP Semiconductors
Product data sheet
PNP general purpose transistors
CHARACTERISTICS Tamb = 25 C; unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current
BC856W; BC857W; BC858W
CONDITIONS VCB = -30 V; IE = 0 VCB = -30 V; IE = 0; Tj = 150 C
MIN. - - - 125 125 125 220 420
TYP. -1 - - - - - - - -75 -250 -700 -850 -650 - - - - -
MAX. -15 -4 -100 475 800 250 475 800 -300 -600 - - -750 -820 3 12 - 10
UNIT nA A nA
IEBO hFE
emitter-base cut-off current DC current gain BC856W BC857W; BC858W BC856AW; BC857AW BC856BW; BC857BW BC857CW
VEB = -5 V; IC = 0 IC = -2 mA; VCE = -5 V
VCEsat
collector-emitter saturation voltage
IC = -10 mA; IB = -0.5 mA - IC = -100 mA; IB = -5 mA; - note 1
mV mV mV mV mV mV pF pF MHz dB
VBEsat
base-emitter saturation voltage
IC = -10 mA; IB = -0.5 mA - IC = -100 mA; IB = -5 mA; - note 1
VBE Cc Ce fT F
base-emitter voltage collector capacitance emitter capacitance transition frequency noise figure
IC = -2 mA; VCE = -5 V IC = -10 mA; VCE = -5 V VCB = -10 V; IE = Ie = 0; f = 1 MHz VEB = -0.5 V; IC = Ic = 0; f = 1 MHz VCE = -5 V; IC = -10 mA; f = 100 MHz IC = -200 A; VCE = -5 V; RS = 2 k; f = 1 kHz; B = 200 Hz
-600 - - - 100 -
Note 1. Pulse test: tp 300 s; 0.02.
2002 Feb 04
4
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856W; BC857W; BC858W
handbook, halfpage
500
MGT711
handbook, halfpage
hFE 400
(1)
-1200 VBE (mV) -1000 -800
MGT712
(1)
300
(2)
-600
200
(2)
-400
100
(3)
(3)
-200
0 -10-2
-10-1
-1
-10
-102 -103 I C (mA)
0 -10-2
-10-1
-1
-10
-102 -103 I C (mA)
BC857AW; VCE = -5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
BC857AW; VCE = -5 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
Fig.2
DC current gain as a function of collector current; typical values.
Fig.3
Base-emitter voltage as a function of collector current; typical values.
-104 handbook, halfpage VCEsat (mV) -103
MGT713
handbook, halfpage
-1200 VBEsat (mV) -1000 -800 -600
MGT714
(1) (2)
(3)
-102
(1)
-400 -200
(3) (2)
-10 -10-1
-1
-10
-102 -103 I C (mA)
0 -10-1
-1
-10
-102 -103 I C (mA)
BC857AW; IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
BC857AW; IC/IB = 20. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
Fig.4
Collector-emitter saturation voltage as a function of collector current; typical values.
Fig.5
Base-emitter saturation voltage as a function of collector current; typical values.
2002 Feb 04
5
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856W; BC857W; BC858W
handbook, halfpage
1000
MGT715
handbook, halfpage
hFE 800
-1200 VBE (mV) -1000 -800
MGT716
(1)
600
(1)
(2)
-600 -400 -200
(3)
400
(2)
200
(3)
0 -10-2
-10-1
-1
-10
-102 -103 I C (mA)
0 -10-2
-10-1
-1
-10
-102 -103 I C (mA)
BC857BW; VCE = -5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
BC857BW; VCE = -5 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
Fig.6
DC current gain as a function of collector current; typical values.
Fig.7
Base-emitter voltage as a function of collector current; typical values.
-104 handbook, halfpage VCEsat (mV) -103
MGT717
handbook, halfpage
-1200 VBEsat (mV) -1000 -800
MGT718
(1) (2)
-600
(3)
-102
(1)
-400 -200
(3) (2)
-10 -10-1
-1
-10
-102 -103 I C (mA)
0 -10-1
-1
-10
-102 -103 I C (mA)
BC857BW; IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
BC857BW; IC/IB = 20. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
Fig.8
Collector-emitter saturation voltage as a function of collector current; typical values.
Fig.9
Base-emitter saturation voltage as a function of collector current; typical values.
2002 Feb 04
6
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856W; BC857W; BC858W
handbook, halfpage
1000
MGT719
handbook, halfpage (1)
hFE 800
-1200 VBE (mV) -1000 -800
MGT720
(1)
600
(2) (2)
-600 -400
400
(3) (3)
200
-200
0 -10-2
-10-1
-1
-10
-102 -103 I C (mA)
0 -10-1
-1
-10
-102
-103 I C (mA)
BC857CW; VCE = -5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
BC857CW; VCE = -5 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
Fig.10 DC current gain as a function of collector current; typical values.
Fig.11 Base-emitter voltage as a function of collector current; typical values.
-104 handbook, halfpage VCEsat (mV) -103
MGT721
handbook, halfpage
-1200 VBEsat (mV) -1000 -800
MGT722
(1) (2)
-600
(3)
-102
(1)
-400 -200
(3) (2)
-10 -10-1
-1
-10
-102 -103 I C (mA)
0 -10-1
-1
-10
-102 -103 I C (mA)
BC857CW; IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
BC857CW; IC/IB = 20. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
Fig.12 Collector-emitter saturation voltage as a function of collector current; typical values.
Fig.13 Base-emitter saturation voltage as a function of collector current; typical values.
2002 Feb 04
7
NXP Semiconductors
Product data sheet
PNP general purpose transistors
PACKAGE OUTLINE
BC856W; BC857W; BC858W
Plastic surface mounted package; 3 leads
SOT323
D
B
E
A
X
y
HE
vMA
3
Q
A
A1 c
1
e1 e bp
2
wM B Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2
OUTLINE VERSION SOT323
REFERENCES IEC JEDEC EIAJ SC-70
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
2002 Feb 04
8
NXP Semiconductors
Product data sheet
PNP general purpose transistors
DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes PRODUCT STATUS(2) Development Qualification Production
BC856W; BC857W; BC858W
DEFINITION This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2002 Feb 04 9 above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
NXP Semiconductors
Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers.
Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com
(c) NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands 613514/04/pp10 Date of release: 2002 Feb 04 Document order number: 9397 750 09168

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